Ion analyzing apparatus and ion analyzing method

ABSTRACT

An ion analyzing apparatus includes a sensor; a counter electrode having openings, the counter electrode being positioned so as to substantially surround the sensor; and a bias generating circuit coupled to the sensor, wherein the sensor includes quartz crystal and a pair of electrodes positioned on surface of the quartz crystal, and one of the pair of electrodes is coupled to the bias generating circuit.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is based upon and claims the benefit of priority of theprior Japanese Patent Application No. 2009-188862, filed on Aug. 18,2009, the entire contents of which are incorporated herein by reference.

FIELD

The embodiment discussed herein relates to an ion analyzing apparatusand ion analyzing method.

BACKGROUND

In manufacturing of electronic devices such as semiconductor devices,static electricity generated in the electronic devices and/ormanufacturing apparatuses may affect the performance of the devicesand/or the manufacturing yields. Therefore, ionizers are widely used atthe manufacturing sites of electronic devices in order to remove staticelectricity.

An ionizer has a needle-type electrode. For example, corona dischargeoccurs at the tip of the electrode upon application of a high voltage ofa few kilovolts of electricity to the electrode, and air ions aregenerated at the tip of the electrode. Using a fan blower, for example,the generated air ions are sprayed over an electrically charged targetto be discharged, thereby neutralizing the electric charge of the targetto be discharged. In this manner, static electricity of the target to bedischarged may be removed.

SUMMARY

According to an aspect of an embodiment, an ion analyzing apparatusincludes a sensor; a counter electrode having openings, the counterelectrode being positioned so as to substantially surround the sensor;and a bias generating circuit coupled to the sensor, wherein the sensorincludes quartz crystal and a pair of electrodes positioned on surfaceof the quartz crystal, and one of the pair of electrodes is coupled tothe bias generating circuit.

According to another aspect of an embodiment, an ion analyzing methodincludes measuring a change in a first oscillation frequency of a sensorin time; measuring a change in a second oscillation frequency of thesensor in time while applying a bias voltage to the sensor and allowingions that pass through openings provided in a counter electrodepositioned so as to substantially surround the sensor to be adsorbed onthe sensor; and detecting adsorption of the ions on the sensor from adifference between the change in the first oscillation frequency in timeand the change in the second oscillation frequency in time.

The object and advantages of the invention will be realized and attainedby at least those elements, features, and combinations particularlypointed out in the claims.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory and arenot restrictive of the invention, as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram illustrating an exemplary ion analyzing apparatusaccording to a first embodiment;

FIGS. 2A and 2B are plan views illustrating examples of a counterelectrode in the first embodiment;

FIG. 3 is a graph illustrating an example of an analyzing method usingthe ion analyzing apparatus according to the first embodiment;

FIG. 4 is a graph illustrating another example of the analyzing methodusing the ion analyzing apparatus according to the first embodiment;

FIG. 5 is a diagram illustrating an exemplary ion analyzing apparatusaccording to a second embodiment;

FIG. 6 is a graph illustrating an example of an analyzing method usingthe ion analyzing apparatus according to the second embodiment;

FIG. 7 is a diagram illustrating another example of the ion analyzingapparatus according to the second embodiment;

FIG. 8 is a diagram illustrating another example of the ion analyzingapparatus according to the second embodiment;

FIG. 9 is a diagram illustrating another example (part 2) of the ionanalyzing apparatus according to the second embodiment;

FIG. 10 is a diagram illustrating an exemplary ion analyzing apparatusaccording to a third embodiment; and

FIG. 11 is a diagram illustrating an example of the arrangement ofsensor units of the ion analyzing apparatus according to the thirdembodiment.

DESCRIPTION OF EMBODIMENTS

A first embodiment will be described with reference to FIGS. 1 to 4.

FIG. 1 is a diagram illustrating an ion analyzing apparatus according toa first embodiment. As illustrated in FIG. 1, the ion analyzingapparatus includes a sensor unit 1 and a control unit 2.

Each unit of the ion analyzing apparatus will now be described in moredetail.

The sensor unit 1 includes a sensor 3, a counter electrode 4, and anoscillation circuit 5.

The sensor 3 includes, for example, a quartz crystal oscillatorincluding a pair of electrodes 7 and 8 on surfaces of quartz crystal 6.An oscillation circuit 5 configured to apply a voltage to the electrodes7 and 8 is coupled to the electrodes 7 and 8.

The sensor 3 is called a micro balance sensor or a quartz crystaloscillator microbalance (QCM) sensor, for example. A QCM sensor uses thephenomenon in which the oscillation frequency of the quartz crystaloscillator changes in accordance with the mass of the quartz crystaloscillator. A QCM sensor detects the presence of a matter based on achange in the oscillation frequency of the quartz crystal oscillatorwhen the matter in the atmosphere is adsorbed on the surface of thequartz crystal oscillator.

For example, a change ΔF[Hz] in the oscillation frequency may beexpressed by:

ΔF=−F0² ·Δm/(N·ρ·A)

where F0 [MHz] indicates the basic frequency when there is noadsorption, N [Hz·cm] indicates the frequency constant of the quartzcrystal used, A [cm²] indicates the area of the electrodes, ρ[g·cm⁻³]indicates the density of the quartz crystal used, and Δm [g] indicatesthe mass of the adsorbed matter. Since the oscillation frequency changesby ΔF because of the mass Δm of the adsorbed matter, the amount of theadsorbed matter may be measured by measuring ΔF.

ΔF of 1 Hz corresponds to an adsorbed amount of about 1 ng·cm⁻² when aquartz crystal oscillator with F0 of 25 MHz is used. Adsorption of asubnanogram/cm² may be detected by using the QCM sensor.

The counter electrode 4 is positioned so as to substantially surroundthe sensor 3 and includes a plurality of openings 9. A conductive andoxidation-resistant material is preferable as the material of thecounter electrode 4, and metal such as stainless steel or nickel (Ni)may be used. The gap between the sensor 3 and the counter electrode 4is, for example, about 3 mm to 10 mm.

Positioning the counter electrode 4 so as to substantially surround thesensor 3 allows the counter electrode 4 to have a shielding effectagainst an electric field generated between the sensor 3 and the counterelectrode 4. Therefore, an electric field is prevented from leaking outof the counter electrode 4, thus avoiding a change in the distributionof ions.

The use of the counter electrode 4 with the openings 9 allows adsorptionof ions outside the counter electrode 4, through the openings 9, ontothe sensor 3, as described later. In order to increase the ease ofpassage of ions, a higher aperture ratio of a mesh is more preferable.However, the higher the aperture ratio, the weaker the shielding effect.This results in a higher probability of leakage of the electric field.To avoid such a problem, the counter electrode 4 preferably has a meshshape. For example, the aperture ratio is preferably about 90%, and thepitch of the mesh is preferably about 60 mesh.

FIGS. 2A and 2B are plan views illustrating examples of the counterelectrode 4. As illustrated in FIG. 2A, a material with the plurality ofopenings 9 may be used as the counter electrode 4. Alternatively, asillustrated in FIG. 2B, a cloth-type material shaped as a grid (orribbons) may be used as the counter electrode 4 with the openings 9. Thethickness of the counter electrode 4 is, for example, about 400 μm.

With the use of the mesh-type counter electrode 4, the counter electrode4 with a desired aperture ratio may be easily manufactured, and thethickness of the counter electrode 4 may be reduced.

Referring back to FIG. 1, the oscillation circuit 5 is coupled to thepair of electrodes 7 and 8 of the sensor 3, and the oscillation circuit5 may apply a voltage to the electrodes 7 and 8. The absolute value ofthe magnitude of the voltage is, for example, about 5 V.

The control unit 2 includes a positive bias generating circuit 10, anegative bias generating circuit 11, a switching circuit 12, a frequencymeasuring circuit 13, and a storage controller 14.

The positive bias generating circuit 10 and the negative bias generatingcircuit 11 are coupled to the electrode 7 of the sensor 3 via the commonswitching circuit 12, and the positive bias generating circuit 10 andthe negative bias generating circuit 11 may apply a positive bias or anegative bias to the electrode 7. The absolute value of the positivebias or the negative bias is, for example, about 100 V. The oscillationcircuit 5 is coupled to the frequency measuring circuit 13. Thefrequency measuring circuit 13 measures a change ΔF in the frequency ofthe oscillation circuit 5.

The frequency measuring circuit 13 is coupled to the storage controller14. The value of change ΔF in frequency, which is measured by thefrequency measuring circuit 13, may be stored in the storage controller14.

The storage controller 14 also performs switching control of theconnection between the electrode 7 of the sensor 3 and the positive biasgenerating circuit 10 or the negative bias generating circuit 11 bydriving the switching circuit 12. For example, a personal computer (PC)may be used as the storage controller 14.

FIG. 3 is a graph illustrating an analyzing method using the ionanalyzing apparatus according to the first embodiment. The method isdescribed in conjunction with FIG. 1.

Firstly, the storage controller 14 sends a control signal A1 to theswitching circuit 12. After the switching circuit 12 receives thecontrol signal A1, a change ΔF in the oscillation frequency is measuredwithout application of a voltage to the sensor 3 from elapsed time A toB, such as for ten minutes.

Since matter existing in the atmosphere moves by diffusion, the matterreaches the sensor 3 and is adsorbed on the sensor 3 without applicationof a voltage to the sensor 3. With the adsorption, the mass of thesensor 3 increases by Δm, and the oscillation frequency decreases by ΔF.Gradients in FIG. 3 are values that reflect the amount of adsorption perunit time.

Then, the storage controller 14 sends a control signal A2 to theswitching circuit 12. After the switching circuit 12 receives thecontrol signal A2, a change ΔF′ in the frequency is measured withapplication of a positive bias to the sensor 3 from elapsed time B to C,such as for ten minutes. Since the sensor 3 is charged positively uponapplication of the positive bias to the sensor 3, negative ions areadsorbed on the sensor 3.

Since the counter electrode 4 includes the openings 9, negative ionsoutside the counter electrode 4 may pass through the openings 9 andreach the sensor 3, which is positioned inside the counter electrode 4.The counter electrode 4 is preferably grounded from a viewpoint ofpreventing adsorption of ions on the counter electrode 4.

Matter adsorbed on the sensor 3 as a result of application of thepositive bias includes matter with electric charge and matter withoutelectric charge. The effects of the matter without electric charge maybe removed by subtracting ΔF, which is measured without application of avoltage, from ΔF′, which is measured with application of the positivebias. The gradient of the difference between ΔF, which is measuredwithout application of a voltage, and ΔF', which is measured withapplication of the positive bias, is a value that reflects the densityof the negative ions.

Then, the storage controller 14 sends a control signal A3 to theswitching circuit 12. After the switching circuit 12 receives thecontrol signal A3, a change ΔF″ in the frequency is measured withapplication of a negative bias to the sensor 3 from elapsed time C to D,such as for ten minutes. Since the sensor 3 is charged negatively uponapplication of the negative potential to the sensor 3, positive ions areadsorbed on the sensor 3.

Positive ions outside the counter electrode 4 may also pass through theopenings 9 and reach the sensor 3, which is positioned inside thecounter electrode 4.

Matter adsorbed on the sensor 3 as a result of application of thenegative bias includes matter with electric charge and matter withoutelectric charge. The effects of the matter without electric charge maybe removed by subtracting ΔF, which is measured without application of avoltage, from ΔF″, which is measured with application of the negativebias. The gradient of the difference between ΔF, which is measuredwithout application of a voltage, and ΔF″, which is measured withapplication of the negative bias, is a value that reflects the densityof the positive ions.

With a comparison of ΔF′, which is measured using the foregoing methodwith application of the positive bias, and ΔF″, which is measured usingthe foregoing method with application of the negative bias, thepositive-negative balance of ions in the space where the measurementshave been done may be detected, and an ionizer's effect of discharging atarget to be discharged may be detected. Changes in the ion densities intime may be substantially constantly measured (monitored) by repeatingthe foregoing procedure.

FIG. 4 is a graph illustrating another example of the analyzing methodusing the ion analyzing apparatus according to the first embodiment.

Firstly, as illustrated in FIG. 3 of the first embodiment, the storagecontroller 14 sends the control signal A1 to the switching circuit 12. Achange in ΔF in the oscillation frequency is measured withoutapplication of a voltage to the sensor 3 from elapsed time A to B, suchas for ten minutes.

Then, the storage controller 14 sends the control signal A3 to theswitching circuit 12. After the switching circuit 12 receives thecontrol signal A3, a change in ΔF″ in the frequency is measured withapplication of a negative bias to the sensor 3 from elapsed time B to C,such as for ten minutes. Since the sensor 3 is charged negatively uponapplication of the negative bias to the sensor 3, positive ions areadsorbed on the sensor 3. The gradient of a difference obtained bysubtracting ΔF, which is measured without application of a voltage, fromΔF″, which is measured with application of the negative bias, is a valuethat reflects the density of the positive ions serving as a target to bemeasured.

Then, the storage controller 14 sends the control signal A2 to theswitching circuit 12. After the switching circuit 12 receives thecontrol signal A2, a change in ΔF′ in the frequency is measured withapplication of a positive bias to the sensor 3 from elapsed time C to D,such as for ten minutes. Since the sensor 3 is charged positively uponapplication of the positive bias to the sensor 3, negative ions areadsorbed on the sensor 3. The gradient of a difference obtained bysubtracting ΔF, which is measured without application of a voltage, fromΔF′, which is measured with application of the positive bias, is a valuethat reflects the density of the negative ions serving as a target to bemeasured.

With a comparison of ΔF′, which is measured using the foregoing methodwith application of the positive bias, and ΔF″, which is measured usingthe foregoing method with application of the negative bias, thepositive-negative balance of ions in the space where the measurementshave been done may be detected, and an ionizer's effect of discharging atarget to be discharged may be detected.

A second embodiment will now be described with reference to FIGS. 5 to9.

FIG. 5 is a diagram illustrating an ion analyzing apparatus according tothe second embodiment.

The ion analyzing apparatus includes a sensor unit 21 and a control unit22.

Each unit of the ion analyzing apparatus will now be described in moredetail.

The sensor unit 21 includes a first sensor 23, a second sensor 24, acounter electrode 25, a first oscillation circuit 26, and a secondoscillation circuit 27.

The first sensor 23 and the second sensor 24 may be substantiallysurrounded by the counter electrode 25 having openings 28. The gapbetween the first sensor 23 and the second sensor 24 is, for example,about 6 mm to 20 mm. The first oscillation circuit 26 is coupled toelectrodes 29 and 30 of the first sensor 23. The second oscillationcircuit 27 is coupled to electrodes 31 and 32 of the second sensor 24.

The control unit 22 includes a positive bias generating circuit 33, anegative bias generating circuit 34, a switching circuit 35, a frequencymeasuring circuit 36, and a storage controller 37.

The positive bias generating circuit 33 is coupled to the electrode 29of the first sensor 23, and the positive bias generating circuit 33 mayapply a positive bias to the electrode 29. The negative bias generatingcircuit 34 is coupled to the electrode 31 of the second sensor 24, andthe negative bias generating circuit 34 may apply a negative bias to theelectrode 31.

The first oscillation circuit 26 and the second oscillation circuit 27are coupled via the switching circuit 35 to the frequency measuringcircuit 36.

The frequency measuring circuit 36 is coupled to the storage controller37. Values of changes ΔF1 and ΔF2 in the frequencies of the firstoscillation circuit 26 and the second oscillation circuit 27,respectively, which are measured by the frequency measuring circuit 36,may be stored in the storage controller 37. The storage controller 37may also perform control for applying a positive or negative biasvoltage to the first sensor 23 or the second sensor 24 by driving thepositive bias generating circuit 33 or the negative bias generatingcircuit 34.

The storage controller 37 may perform control for switching connectionbetween the frequency measuring circuit 36 and the first oscillationcircuit 26 or the second oscillation circuit 27, which serves as atarget whose change in the frequency is to be measured, by driving theswitching circuit 35. For example, a PC may be used as the storagecontroller 37.

FIG. 6 is a graph illustrating an analyzing method using the ionanalyzing apparatus according to the second embodiment. The method isdescribed in conjunction with FIG. 5.

Firstly, the storage controller 37 sends a control signal B1 to theswitching circuit 35, the positive bias generating circuit 33, and thenegative bias generating circuit 34. After the switching circuit 35, thepositive bias generating circuit 33, and the negative bias generatingcircuit 34 receive the control signal B1, changes in ΔF1 and ΔF2 in therespective oscillation frequencies are measured without application ofvoltages to the first sensor 23 and the second sensor 24 from elapsedtime A to B, such as for ten minutes. Here, with the use of theswitching circuit 35, the first oscillation circuit 26 or the secondoscillation circuit 27 to be coupled to the frequency measuring circuit36 is switched periodically, such as every second, and the oscillationfrequencies of the first oscillation circuit 26 and the secondoscillation circuit 27 are alternately measured. Gradients ΔF1 and ΔF2from A to B, which are obtained by the measurements, are values thatreflect the amount of adsorption per unit time, without application ofvoltages, of the first sensor 23 and the second sensor 24, respectively.

Changes in the frequencies of the first sensor 23 and the second sensor24 may be measured at the same time by alternately measuring theoscillation frequencies of the first oscillation circuit 26 and thesecond oscillation circuit 27.

Then, the storage controller 37 sends a control signal B2 to theswitching circuit 12. After the switching circuit 12 receives thecontrol signal B2, changes in ΔF1′ and ΔF2′ in the frequencies aremeasured with application of a positive bias to the first sensor 23 anda negative bias to the second sensor 24 from elapsed time B to C, suchas for ten minutes. The absolute values of the applied positive bias andthe applied negative bias are, for example, about 100 V. With the use ofthe switching circuit 35, the first oscillation circuit 26 or the secondoscillation circuit 27 to be coupled to the frequency measuring circuit36 is switched every second, for example, and the oscillationfrequencies of the first oscillation circuit 26 and the secondoscillation circuit 27 are alternately measured.

Since the first sensor 23 is charged positively upon application of thepositive bias to the first sensor 23, negative ions are adsorbed on thefirst sensor 23. In contrast, since the second sensor 24 is chargednegatively upon application of the negative bias to the second sensor24, positive ions are adsorbed on the second sensor 24.

Matter adsorbed on the first sensor 23 as a result of application of thepositive bias and matter adsorbed on the second sensor 24 as a result ofapplication of the negative bias include matter with electric charge andmatter without electric charge. The effects of the matter withoutelectric charge may be removed by comparing changes in the oscillationfrequencies, which are measured without application of voltages, withchanges in the oscillation frequencies, which are measured withapplication of the biases.

The gradient of a difference between ΔF1, which is measured withoutapplication of a voltage, and ΔF1′, which is measured with applicationof the positive bias, is a value that reflects the density of thenegative ions. The gradient of a difference between ΔF2, which ismeasured without application of a voltage, and ΔF2′, which is measuredwith application of the negative bias, is a value that reflects thedensity of the positive ions.

As described above, the density of the negative ions and the density ofthe positive ions may be measured at the same time by alternatelymeasuring the oscillation frequencies of the first oscillation circuit26 and the second oscillation circuit 27.

With a comparison of the gradient of the difference between ΔF1 and ΔF1′with the gradient of the difference between ΔF2 and ΔF2′, thepositive-negative balance of ions in the space where the measurementshave been done may be detected, and an ionizer's effect of discharging atarget to be discharged may be estimated. Changes in the ion densitiesin time may be constantly measured (monitored) by repeating theforegoing procedure.

FIG. 7 is a diagram illustrating another example of the ion analyzingapparatus according to the second embodiment.

As illustrated in FIG. 7, a counter electrode 25 b is provided between afirst sensor 23 a and a second sensor 24 a. The first sensor 23 a andthe second sensor 24 a are individually substantially surrounded by acounter electrode 25 a and the counter electrode 25 b.

A reduction in the amount of adsorption involved in a chemical reactionbetween positive and negative ions may be reduced when the first sensor23 a and the second sensor 24 a are individually substantiallysurrounded by the counter electrode 25 a and the counter electrode 25 b.Blocking of adsorption of ions due to an electric field generatedbetween the first sensor 23 a and the second sensor 24 a may also bereduced.

FIG. 8 is a diagram illustrating another example of the ion analyzingapparatus according to the second embodiment.

As illustrated in FIG. 8, a sensor unit 21 a including a first counterelectrode 38 positioned so as to substantially surround a first sensor23 b may be joined, e.g., back to back, with a sensor unit 21 bincluding a second counter electrode 39 positioned so as tosubstantially surround a second sensor 24 b.

According to the foregoing configuration, because the sensor unit 21 ofthe ion analyzing apparatus may be manufactured by joining the twosensor units 21 a and 21 b which have undergone a manufacturing processand a test process and been determined to be non-defective units, themanufacturing yields of the sensor unit 21 may be improved.

FIG. 9 is a diagram illustrating another example (part 2) of the ionanalyzing apparatus according to the second embodiment.

As illustrated in FIG. 9, a flat plate with a smaller aperture ratiothan that of the counter electrode 25 a is used as a counter electrode25 c provided between a first sensor 23 c and a second sensor 24 c.

According to the foregoing configuration, because mutual movement ofions between the first sensor 23 c and the second sensor 24 c is lesslikely to occur, the counter electrode 25 c has a higher effect ofsuppressing a change in the distribution of ions around the first sensor23 c and the second sensor 24 c.

A third embodiment will now be described with reference to FIGS. 10 and11.

FIG. 10 is a diagram illustrating an ion analyzing apparatus accordingto the third embodiment.

The ion analyzing apparatus includes a sensor unit group 41 including aplurality of sensor units 41 a to 41 n, and a control unit 42.

Each unit of the ion analyzing apparatus will now be described in moredetail.

Each sensor unit of the sensor unit group 41 includes a sensor includinga quartz crystal oscillator, a counter electrode having openings that ispositioned so as to substantially surround the sensor, and anoscillation circuit (none of them are illustrated in the drawings). Forexample, the sensor unit 1 shown in FIG. 1 in the first embodiment orthe sensor unit 21 shown in FIG. 5 in the second embodiment may be usedas each sensor unit.

The control unit 42 includes a positive bias generating circuit 43, anegative bias generating circuit 44, a switching circuit 45, a frequencymeasuring circuit 46, and a storage controller 47.

Each sensor unit 41 a to 41 n is coupled to the common switching circuit45. The positive bias generating circuit 43 and the negative biasgenerating circuit 44 are independently coupled to the switching circuit45. The switching circuit 45 is also coupled to the frequency measuringcircuit 46. The frequency measuring circuit 46 is coupled to the storagecontroller 47. The storage controller 47 may store the value of a changein the frequency of the oscillation circuit of each sensor unit, whichis measured by the frequency measuring circuit 46.

Further, the storage controller 47 drives the positive bias generatingcircuit 43 and the negative bias generating circuit 44 by sending acontrol signal C1 to the switching circuit 45, and performs control forapplying a positive or negative bias to the sensor unit group 41 and forswitching connection of each sensor unit with the frequency measuringcircuit 46 by using the switching circuit 45. For example, a PC may beused as the storage controller 47.

According to the foregoing configuration, measurements of ion densitiesmay be performed at many points by using the plurality of sensor units41 a to 41 n, and the ion distribution in space from an ionizer to atarget to be discharged may be detected with a high accuracy. Sincemeasurements at many points using one control unit may be performed byconnecting the sensor units to the switching circuit 45 one at a time,the size and cost of the ion analyzing apparatus may be reduced.

Next, an analyzing method using the ion analyzing apparatus according tothe third embodiment will be described with reference to FIG. 10.

Firstly, the storage controller 47 sends the control signal C1 to theswitching circuit 45. After the switching circuit 45 receives thecontrol signal C1, changes ΔFa to ΔFn (hereinafter called ΔF) in theoscillation frequencies of the respective sensor units are measured oneat a time by the frequency measuring circuit 46 without application of avoltage to the sensor units, while the sensor unit to be coupled to theswitching circuit 45 is sequentially switched.

Then, the storage controller 47 sends a control signal C2 to theswitching circuit 45. After the switching circuit 45 receives thecontrol signal C2, changes ΔFa′ to ΔFn′ (hereinafter called ΔF′) in theoscillation frequencies of the respective sensor units are sequentiallymeasured by the frequency measuring circuit 46 with application of apositive bias to the sensor units one at a time, while the sensor unitto be coupled to the switching circuit 45 is switched one at a time.

Since the sensor units are charged positively upon application of thepositive bias to the sensor units, negative ions are adsorbed on thesensor units. The gradient of a difference obtained by subtracting ΔF,which is measured without application of a voltage, from ΔF′, which ismeasured with application of the positive bias, is a value that reflectsthe density of the negative ions. That is, the tendency of the densitydistribution of the negative ions at each measurement point may bedetected.

Then, the storage controller 47 sends a control signal C3 to theswitching circuit 45. After the switching circuit 45 receives thecontrol signal C3, changes ΔFa″ to ΔFn″ (hereinafter called ΔF″) in thefrequencies of the respective sensor units are sequentially measured bythe frequency measuring circuit 46 with application of a negative biasto the sensor units one at a time, while the sensor unit to be coupledto the switching circuit 45 is sequentially switched.

Since the sensor units are charged negatively upon application of thenegative bias to the sensor units, positive ions are adsorbed on thesensor units. The gradient of a difference obtained by subtracting ΔFa,which is measured without application of a voltage, from ΔFa″, which ismeasured with application of the negative bias, is a value that reflectsthe density of the positive ions at an arbitrary measurement point. Thetendency of the density distribution of the positive ions at eachmeasurement point may be detected by obtaining the gradient of thedifference at each measurement point by using the foregoing method.

With a comparison of ″F″ and ΔF″, which are measured using the foregoingmethod, the positive-negative balance of ion densities at the individualmeasurement points may be detected, and an ionizer's effect ofdischarging a target to be discharged may be detected. Changes in theion densities in time may be substantially constantly measured(monitored) by repeating the foregoing procedure.

FIG. 11 is a diagram illustrating an example of the arrangement ofsensor units of the ion analyzing apparatus according to the thirdembodiment.

As illustrated in FIG. 11, the plurality of sensor units 41 a to 41 n ofthe sensor unit group 41 are arranged in a matrix in space from anionizer 49 to a target 50 to be discharged. Adjacent sensor units arecoupled to each other via a wire 48. For example, a method of suspendingthe sensor units downward may be used when the sensor units are to bearranged in three dimensions.

The control unit 42 sequentially switches a sensor unit to be connectedperiodically, such as every second, by using a method such as specifyingthe matrix coordinates, and the control unit 42 measures, one at a time,the oscillation frequencies of the oscillation circuits of theindividual sensor units. With this method, the ion densities of eachsensor unit may be measured. The ion analyzing apparatus according tothe present invention may also be used when, besides the thirdembodiment, the positive-negative ion distribution in space where noionizer is provided is to be detected.

1. An ion analyzing apparatus comprising: a sensor; a counter electrodehaving openings, the counter electrode being positioned so as tosubstantially surround the sensor; and a bias generating circuit coupledto the sensor; the sensor includes a quartz crystal and a pair ofelectrodes positioned on surfaces of the quartz crystal, and one of thepair of electrodes is coupled to the bias generating circuit.
 2. The ionanalyzing apparatus of claim 1, further comprising: an oscillationcircuit coupled to the pair of electrodes of the sensor; and a frequencymeasuring circuit configured to measure a change in frequency of theoscillation circuit.
 3. The ion analyzing apparatus of claim 1, whereinthe counter electrode has a mesh shape.
 4. The ion analyzing apparatusof claim 1, wherein the bias generating circuit includes a positive biasgenerating circuit and a negative bias generating circuit, wherein thepositive bias generating circuit and the negative bias generatingcircuit are configured to apply a positive bias and a negative bias,respectively, to one of the pair of electrodes.
 5. The ion analyzingapparatus of claim 4, wherein the positive bias generating circuit andthe negative bias generating circuit are coupled via a switching circuitto one of the pair of electrodes.
 6. An ion analyzing apparatuscomprising: a first sensor; a second sensor; at least one counterelectrode having openings, the at least one counter electrode beingpositioned so as to substantially surround the first sensor and thesecond sensor; a positive bias generating circuit coupled to the firstsensor; and a negative bias generating circuit coupled to the secondsensor; each of the first sensor and the second sensor includes a quartzcrystal and a pair of electrodes positioned on surfaces of the quartzcrystal, and one of the pair of electrodes of the first sensor iscoupled to the positive bias generating circuit, and one of the pair ofelectrodes of the second sensor is coupled to the negative biasgenerating circuit.
 7. The ion analyzing apparatus of claim 6, whereinthe counter electrode has a mesh shape.
 8. The ion analyzing apparatusof claim 6, wherein the first sensor and the second sensor areindividually substantially surrounded by the at least one counterelectrode.
 9. The ion analyzing apparatus of claim 6, furthercomprising: a first oscillation circuit coupled to the pair ofelectrodes of the first sensor; a second oscillation circuit coupled tothe pair of electrodes of the second sensor; and a frequency measuringcircuit configured to measure a change in frequency of the firstoscillation circuit or the second oscillation circuit.
 10. The ionanalyzing apparatus of claim 9, wherein the frequency measuring circuitis coupled via a switching circuit to the first oscillation circuit andthe second oscillation circuit.
 11. The ion analyzing apparatus of claim6, wherein: the at least one counter electrode includes first and secondcounter electrodes, each having openings; the first sensor issubstantially surrounded by the first counter electrode; and the secondsensor is substantially surrounded by the second counter electrode. 12.An ion analyzing method comprising: measuring a change in a firstoscillation frequency of a sensor in time; measuring a change in asecond oscillation frequency of the sensor in time while applying a biasvoltage to the sensor and allowing ions that pass through openingsprovided in a counter electrode positioned so as to substantiallysurround the sensor to be adsorbed on the sensor; and detectingadsorption of the ions on the sensor from a difference between thechange in the first oscillation frequency in time and the change in thesecond oscillation frequency in time.
 13. The ion analyzing method ofclaim 12, wherein measurement of the change in the second oscillationfrequency in time includes measurement of a change in a thirdoscillation frequency in time while applying a negative bias voltage tothe sensor and allowing positive ions to be adsorbed on the sensor, andmeasurement of a change in a fourth oscillation frequency in time whileapplying a positive bias voltage to the sensor and allowing negativeions to be adsorbed on the sensor, and wherein adsorption of the ions onthe sensor is detected from a difference between the change in the firstoscillation frequency in time and the change in the third oscillationfrequency in time or a difference between the change in the firstoscillation frequency in time and the change in the fourth oscillationfrequency time.
 14. The ion analyzing method of claim 12, wherein thecounter electrode is grounded.